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BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
s
s
s
SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE BCP52 AND BCP53 RESPECTIVELY
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1
SOT-223
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V CER V EBO IC I CM IB I BM P tot T stg Tj Parameter BCP55 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1K) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 60 60 60 5 1 1.5 0.1 0.2 2 -65 to 150 150 Value BCP56 100 80 100 V V V V A A A A W
o o
Unit
C C
October 1997
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BCP55/56
THERMAL DATA
R t hj-amb * R thj-tab * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8
o o
C/W C/W
* Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 30 V V CB = 30 V I C = 100 A for BCP55 for BCP56 I C = 20 mA for BCP55 for BCP56 I C = 100 A for BCP55 for BCP56 I C = 10 A T j = 125 o C 60 100 60 80 60 100 5 Min. Typ. Max. 100 10 Unit nA A V V V V V V V
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CER Collector-Emitter Breakdown Voltage (R BE = 1 K) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain
V (BR)EBO
V CE(sat) V BE(on) h FE
I C = 500 mA I C = 500 mA IC IC IC IC IC = = = = = 5 mA 150 mA 150 mA 150 mA 500 mA
I B = 50 mA V CE = 2 V V CE = 2 V V CE = 2 V for Gr. 6 V CE = 2 V for Gr. 10 V CE = 2 V for Gr. 16 V CE = 2 V V CE = 5 V f = 35 MHz 25 40 63 100 25 130
0.5 1
V V
100 160 250 MHz
fT
Transition Frequency
I C = 10 mA
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BCP55/56
SOT-223 MECHANICAL DATA
mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8
DIM.
L
l2
e1
a b f
d c e4
C
l1
B
C
E
g
P008B
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BCP55/56
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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